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M36W0R6040T0 M36W0R6040B0
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
FEATURES SUMMARY

MULTI-CHIP PACKAGE - 1 die of 64 Mbit (4Mb x 16) Flash Memory - 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE - VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code (Top Flash Configuration), M36W0R6040T0: 8810h - Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h PACKAGES - Compliant with Lead-Free Soldering Processes - Lead-Free Versions
Figure 1. Package
FBGA
Stacked TFBGA88 (ZA) 8 x 10mm
FLASH MEMORY PROGRAMMING TIME - 8s by Word typical for Fast Factory Program - Double/Quadruple Word Program option - Enhanced Factory Program options MEMORY BLOCKS - Multiple Bank Memory Array: 4 Mbit Banks - Parameter Blocks (Top location) SYNCHRONOUS / ASYNCHRONOUS READ - Synchronous Burst Read mode: 66MHz - Asynchronous/ Synchronous Page Read mode - Random Access: 70ns DUAL OPERATIONS - Program Erase in one Bank while Read in others - No delay between Read and Write operations

BLOCK LOCKING - All blocks locked at Power-up - Any combination of blocks can be locked - WPF for Block Lock-Down SECURITY - 128-bit user programmable OTP cells - 64-bit unique device number COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK
PSRAM ACCESS TIME: 70ns LOW STANDBY CURRENT: 110A DEEP POWER DOWN CURRENT: 10A
December 2004
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M36W0R6040T0, M36W0R6040B0
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 FLASH MEMORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 PSRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Figure 3. TFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Address Inputs (A0-A19). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Address Inputs (A20-A21). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Chip Enable (EF).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Output Enable (GF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Write Enable (WF).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Write Protect (WPF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Reset (RPF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Latch Enable (LF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Clock (KF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Wait (WAITF).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PSRAM Chip Enable (E1P).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PSRAM Chip Enable (E2P).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PSRAM Output Enable (GP).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 PSRAM Write Enable (WP).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 PSRAM Upper Byte Enable (UBP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 PSRAM Lower Byte Enable (LBP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VDDF Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VDDP Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VDDQ Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VPPF Program Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VSS Ground.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FUNCTIONAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 4. Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 2. Main Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 FLASH MEMORY DEVICE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 PSRAM DEVICE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 3. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 4. Figure 5. Figure 6. Table 5. Table 6. Table 7. Table 8. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Measurement Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Flash Memory DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Flash Memory DC Characteristics - Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PSRAM DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 7. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Outline . . 15 Table 9. Stacked TFBGA88 8x10mm - 8x10 ball array, 0.8mm pitch, Package Mechanical Data 15 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 10. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 11. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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M36W0R6040T0, M36W0R6040B0
SUMMARY DESCRIPTION
The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package. In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive. All packages are compliant with Lead-free soldering processes. The memory is supplied with all the bits erased (set to `1'). Figure 2. Logic Diagram
VDDQ VDDF 22 A0-A21 DQ0-DQ15 EF GF WF RPF WPF LF KF E1P GP WP E2P UBP LBP M36W0R6040T M36W0R6040B WAITF VPPF VDDP 16
Table 1. Signal Names
A0-A19 DQ0-DQ15 VDDF VDDQ VPPF VSS VDDP NC DU Common Address Inputs Common Data Input/Output Flash Memory Power Supply Common Flash and PSRAM Power Supply for I/O Buffers Common Flash Optional Supply Voltage for Fast Program & Erase Ground PSRAM Power Supply Not Connected Internally Do Not Use as Internally Connected
Flash Memory Control Functions A21-A20 LF EF GF WF RPF WPF KF WAITF Address Inputs for the Flash memory only Latch Enable input Chip Enable input Output Enable input Write Enable input Reset input Write Protect input Burst Clock Wait Data in Burst Mode
PSRAM control functions E1P GP WP E2P UBP LBP Chip Enable input Output Enable input Write Enable input Power-down input Upper Byte Enable input Lower Byte Enable input
VSS
AI08448
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M36W0R6040T0, M36W0R6040B0
Figure 3. TFBGA Connections (Top view through package)
1
2
3
4
5
6
7
8
A
DU
DU
DU
DU
B
A4
A18
A19
VSS
VDDF
NC
A21
A11
C
A5
LBP
NC
VSS
NC
KF
NC
A12
D
A3
A17
NC
VPPF
WP
EP
A9
A13
E
A2
A7
NC
WPF
LF
A20
A10
A15
F
A1
A6
UBP
RPF
WF
A8
A14
A16
G
A0
DQ8
DQ2
DQ10
DQ5
DQ13
WAITF
NC
H
GP
DQ0
DQ1
DQ3
DQ12
DQ14
DQ7
NC
J
NC
GF
DQ9
DQ11
DQ4
DQ6
DQ15
VDDQ
K
EF
NC
NC
NC
VDDP
NC
VDDQ
E2P
L
VSS
VSS
VDDQ
VDDF
VSS
VSS
VSS
VSS
M
DU
DU
DU
DU
AI08525
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M36W0R6040T0, M36W0R6040B0
SIGNAL DESCRIPTIONS
See Figure 2., Logic Diagram and Table 1., Signal Names, for a brief overview of the signals connected to this device. Address Inputs (A0-A19). Addresses A0-A19 are common inputs for the Flash Memory and PSRAM components. The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the Flash memory Program/Erase Controller, and they select the cells to access in the PSRAM. The Flash memory is accessed through the Chip Enable signal (EF) and through the Write Enable (WF) signal, while the PSRAM is accessed through two Chip Enable signals (E1P and E2P) and the Write Enable signal (WP). Address Inputs (A20-A21). Addresses A20-A21 are inputs for the Flash memory component only. The Flash memory is accessed through the Chip Enable signals (EF) and through the Write Enable (WF) signal. Data Input/Output (DQ0-DQ15). For the Flash memory, the Data I/O outputs the data stored at the selected address during a Bus Read operation or inputs a command or the data to be programmed during a Write Bus operation. For the PSRAM, the Upper Byte Data Inputs/Outputs carry the data to or from the upper part of the selected address during a Write or Read operation, when Upper Byte Enable (UBP) is driven Low. Likewise, the Lower Byte Data Inputs/Outputs carry the data to or from the lower part of the selected address during a Write or Read operation, when Lower Byte Enable (LBP) is driven Low. Flash Chip Enable (EF). The Chip Enable inputs activate the memory control logics, input buffers, decoders and sense amplifiers. When Chip Enable is Low, VIL, and Reset is High, VIH, the device is in active mode. When Chip Enable is at VIH the Flash memory is deselected, the outputs are high impedance and the power consumption is reduced to the standby level. Flash Output Enable (GF). The Output Enable pins control data outputs during Flash memory Bus Read operations. Flash Write Enable (WF). The Write Enable controls the Bus Write operation of the Flash memories' Command Interface. The data and address inputs are latched on the rising edge of Chip Enable or Write Enable whichever occurs first. Flash Write Protect (WPF). Write Protect is an input that gives an additional hardware protection for each block. When Write Protect is Low, VIL, Lock-Down is enabled and the protection status of the Locked-Down blocks cannot be changed. When Write Protect is at High, VIH, Lock-Down is disabled and the Locked-Down blocks can be locked or unlocked. (Refer to Lock Status Table in M58WR064F(T/B) datasheet). Flash Reset (RPF). The Reset input provides a hardware reset of the memory. When Reset is at VIL, the memory is in Reset mode: the outputs are high impedance and the current consumption is reduced to the Reset Supply Current IDD2. Refer to Table 6., Flash Memory DC Characteristics - Currents, for the value of IDD2. After Reset all blocks are in the Locked state and the Configuration Register is reset. When Reset is at VIH, the device is in normal operation. Exiting Reset mode the device enters Asynchronous Read mode, but a negative transition of Chip Enable or Latch Enable is required to ensure valid data outputs. The Reset pin can be interfaced with 3V logic without any additional circuitry. It can be tied to VRPH (refer to Table 7., Flash Memory DC Characteristics - Voltages). Flash Latch Enable (LF). Latch Enable latches the address bits on its rising edge. The address latch is transparent when Latch Enable is Low, VIL, and it is inhibited when Latch Enable is High, VIH. Latch Enable can be kept Low (also at board level) when the Latch Enable function is not required or supported. Flash Clock (KF). The Clock input synchronizes the Flash memory to the microcontroller during synchronous read operations; the address is latched on a Clock edge (rising or falling, according to the configuration settings) when Latch Enable is at VIL. Clock is don't care during Asynchronous Read and in write operations. Flash Wait (WAITF). WAIT is a Flash output signal used during Synchronous Read to indicate whether the data on the output bus are valid. This output is high impedance when Flash Chip Enable is at VIH or Flash Reset is at VIL. It can be configured to be active during the wait cycle or one clock cycle in advance. The WAITF signal is not gated by Output Enable. PSRAM Chip Enable (E1P). When asserted (Low), the Chip Enable, E1P, activates the memory state machine, address buffers and decoders, allowing Read and Write operations to be performed. When de-asserted (High), all other pins are ignored, and the device is put, automatically, in low-power Standby mode. PSRAM Chip Enable (E2P). The Chip Enable, E2P, puts the device in Deep Power-down mode when it is driven Low. This is the lowest power mode.
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PSRAM Output Enable (GP). The Output Enable, GP, provides a high speed tri-state control, allowing fast read/write cycles to be achieved with the common I/O data bus. PSRAM Write Enable (WP). The Write Enable, WP, controls the Bus Write operation of the memory. PSRAM Upper Byte Enable (UBP). The Upper Byte Enable, UBP, gates the data on the Upper Byte Data Inputs/Outputs (DQ8-DQ15) to or from the upper part of the selected address during a Write or Read operation. PSRAM Lower Byte Enable (LBP). The Lower Byte Enable, LBP, gates the data on the Lower Byte Data Inputs/Outputs (DQ0-DQ7) to or from the lower part of the selected address during a Write or Read operation. VDDF Supply Voltage. VDDF provides the power supply to the internal core of the Flash memory component. It is the main power supplies for all Flash memory operations (Read, Program and Erase). VDDP Supply Voltage. The VDDP Supply Voltage supplies the power for all operations (Read or Write) and for driving the refresh logic, even when the device is not being accessed. VDDQ Supply Voltage. VDDQ provides the power supply for the Flash Memory and PSRAM I/O pins. This allows all Outputs to be powered independently of the Flash Memory and PSRAM core power supplies: VDDF and VDDP, respectively. VPPF Program Supply Voltage. VPPF is both a Flash Memory control input and a Flash Memory power supply pin. The two functions are selected by the voltage range applied to the pin. If VPPF is kept in a low voltage range (0V to VDDQ) VPPF is seen as a control input. In this case a voltage lower than VPPLKF gives an absolute protection against Program or Erase, while VPPF > VPP1F enables these functions (see Tables 6 and 7, DC Characteristics for the relevant values). VPPF is only sampled at the beginning of a Program or Erase; a change in its value after the operation has started does not have any effect and Program or Erase operations continue. If VPPF is in the range of VPPHF it acts as a power supply pin. In this condition VPPF must be stable until the Program/Erase algorithm is completed. VSS Ground. VSS is the common ground reference for all voltage measurements in the Flash (core and I/O Buffers) and PSRAM chips. Note: Each Flash memory device in a system should have its supply voltage (VDDF) and the program supply voltage VPPF decoupled with a 0.1F ceramic capacitor close to the pin (high frequency, inherently low inductance capacitors should be as close as possible to the package). See Figure 6., AC Measurement Load Circuit. The PCB track widths should be sufficient to carry the required VPPF program and erase currents.
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M36W0R6040T0, M36W0R6040B0
FUNCTIONAL DESCRIPTION
The Flash Memory and PSRAM components have separate power supplies but share the same grounds. They are distinguished by three Chip Enable inputs: EF for the Flash memory and E1P and E2P for the PSRAM. Recommended operating conditions do not allow more than one device to be active at a time. The Figure 4. Functional Block Diagram most common example is simultaneous read operations on the Flash memory and the PSRAM which would result in a data bus contention. Therefore it is recommended to put the other devices in the high impedance state when reading the selected device.
VDDF
VPPF
VDDQ
A20-A21
EF GF WF LF KF RPF A0-A19 WPF
64 Mbit Flash Memory
WAITF
DQ0-DQ15
VDDP
E1P GP WP E2P UBP LBP 16 Mbit PSRAM
VSS
AI08449
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M36W0R6040T0, M36W0R6040B0
Table 2. Main Operating Modes
Operation Flash Read Flash Write Flash Address Latch Flash Output Disable Flash Standby Flash Reset PSRAM Read Flash Memory must be disabled PSRAM Write Output Disable PSRAM Standby PSRAM Deep Power-Down
Note: 1. 2. 3. 4.
EF VIL VIL VIL VIL VIH X
GP VIL VIH X VIH X X
WP VIH VIL VIH VIH X X
LF VIL(2) VIL(2) VIL X X X
RPF VIH VIH VIH VIH VIH VIL
WAITF(4)
E1P
E2P
GP
WP
UBP LBP
DQ15-DQ0 Flash Data Out
PSRAM must be disabled
Flash Data In Flash Data Out or Hi-Z (3) Flash Hi-Z
Hi-Z Hi-Z VIL VIL VIL
Any PSRAM mode is allowed
Flash Hi-Z Flash Hi-Z
VIH VIH VIH VIH VIL
VIL VIH VIH X X
VIH VIL VIH X X
VIL VIL X X X
VIL VIL X X X
PSRAM data out PSRAM data in PSRAM Hi-Z PSRAM Hi-Z PSRAM Hi-Z
Any Flash mode is allowed.
VIH X
X = Don't care. LF can be tied to VIH if the valid address has been previously latched. Depends on GF. WAIT signal polarity is configured using the Set Configuration Register command. Refer to M58WR064F(T/B) datasheet for details.
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M36W0R6040T0, M36W0R6040B0
FLASH MEMORY DEVICE
The M36W0R6040T0 and M36W0R6040B0 contain a 64Mbit Flash memory. For detailed information on how to use it, see the M58WR064F(T/B) datasheet which is available from your local STMicroelectronics distributor.
PSRAM DEVICE
The M36W0R6040T0 and M36W0R6040B0 contain a 16Mbit PSRAM. For detailed information on how to use it, see the M69AR024B datasheet which is available from your local STMicroelectronics distributor.
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M36W0R6040T0, M36W0R6040B0
MAXIMUM RATING
Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not imTable 3. Absolute Maximum Ratings
Value Symbol TA TBIAS TSTG TLEAD VIO VDDF VDDQ VDDP VPPF IO tVPPFH Parameter Min Ambient Operating Temperature Temperature Under Bias Storage Temperature Lead Temperature during Soldering Input or Output Voltage Flash Memory Core Supply Voltage Input/Output Supply Voltage PSRAM Supply Voltage Flash Memory Program Voltage Output Short Circuit Current Time for VPPF at VPPFH -0.5 -0.2 -0.2 -0.2 -0.2 -30 -40 -65 Max 85 125 155
(1)
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Unit C C C C V V V V V mA hours
7191395 specification,
VDDQ+0.6 2.45 2.45 3.3 14 100 100
ECOPACK(R)
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
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M36W0R6040T0, M36W0R6040B0
DC AND AC PARAMETERS
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Conditions summarized in Table 4., Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Flash Memory Parameter Min VDDF Supply Voltage VDDP Supply Voltage VDDQ Supply Voltage 1.7 - 1.7 11.4 -0.4 -40 30 5 0 to VDDQ VDDQ/2 0 to VDDP VDDP/2 Max 1.95 - 1.95 12.6 VDDQ +0.4 85 Min - 1.7 - - - -30 50 Max - 1.95 - - - 85 V V V V V C pF ns V V PSRAM Unit
VPPF Supply Voltage (Factory environment) VPPF Supply Voltage (Application environment)
Ambient Operating Temperature Load Capacitance (CL) Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
VDDQ
VDDQ VDDQ/2 0V DEVICE UNDER TEST 0.1F 0.1F CL 16.7k VDDF VDDQ 16.7k
AI06161
CL includes JIG capacitance
AI08364
Table 5. Device Capacitance
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 12 15 Unit pF pF
Note: Sampled only, not 100% tested.
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Table 6. Flash Memory DC Characteristics - Currents
Symbol ILI ILO Parameter Input Leakage Current Output Leakage Current Supply Current Asynchronous Read (f=6MHz) Test Condition 0V VIN VDDQ 0V VOUT VDDQ EF = VIL, GF = VIH 4 Word Supply Current Synchronous Read (f=54MHz) IDD1 8 Word 16 Word Continuous 4 Word Supply Current Synchronous Read (f=66MHz) 8 Word 16 Word Continuous IDD2 IDD3 IDD4 Supply Current (Reset) Supply Current (Standby) Supply Current (Automatic Standby) Supply Current (Program) IDD5 (1) Supply Current (Erase) RPF = VSS 0.2V EF = VDDF 0.2V EF = VIL, GF = VIH VPPF = VPPH VPPF = VDDF VPPF = VPPH VPPF = VDDF Program/Erase in one Bank, Asynchronous Read in another Bank Program/Erase in one Bank, Synchronous Read in another Bank EF = VDDF 0.2V VPPF = VPPH VPPF = VDDF VPPF = VPPH VPPF = VDDF VPPF VDDF VPPF VDDF 3 7 10 12 13 8 11 14 16 10 10 10 8 10 8 10 13 Min Typ Max 1 1 6 16 18 22 25 17 20 25 30 50 50 50 15 20 15 20 26 Unit A A mA mA mA mA mA mA mA mA mA A A A mA mA mA mA mA
Supply Current IDD6 (1,2) (Dual Operations)
23
45
mA
IDD7(1)
Supply Current Program/ Erase Suspended (Standby) VPPF Supply Current (Program)
10 2 0.2 2 0.2 0.2 0.2
50 5 5 5 5 5 5
A mA A mA A A A
IPP1(1) VPPF Supply Current (Erase) IPP2 IPP3(1) VPPF Supply Current (Read) VPPF Supply Current (Standby)
Note: 1. Sampled only, not 100% tested. 2. VDDF Dual Operation current is the sum of read and program or erase currents.
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Table 7. Flash Memory DC Characteristics - Voltages
Symbol VIL VIH VOL VOH VPP1 VPPH VPPLK VLKO VRPH Parameter Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VPPF Program Voltage-Logic VPPF Program Voltage Factory Program or Erase Lockout VDDF Lock Voltage RPF pin Extended High Voltage 1 3.3 IOL = 100A IOH = -100A Program, Erase Program, Erase VDDQ -0.1 1.1 11.4 1.8 12 3.3 12.6 0.4 Test Condition Min -0.5 VDDQ -0.4 Typ Max 0.4 VDDQ + 0.4 0.1 Unit V V V V V V V V V
Table 8. PSRAM DC Characteristics
Symbol ICC1 VDDP Active Current ICC2 ILI ILO IPD Input Leakage Current Output Leakage Current Deep Power Down Current Parameter Test Condition VDDP = 1.95V, VIN = VIH or VIL, E1P = VIL and E2P = VIH, IOUT = 0mA tAVAV Read / tAVAV Write = minimum tAVAV Read / tAVAV Write = maximum -1 -1 Min Max 20 Unit mA
3 1 1 10
mA A A A
0V VIN VDDP 0V VOUT VDDP VDDP = 1.95V, E1P VDDP -0.2V or E1P VIL, VIN VDDP -0.2V or VIN 0.2V VDDP = 1.95V, E1P = E2P VDDP -0.3V, IOUT = 0mA
ISB VIH (1) VIL (2) VOH VOL
Standby Supply Current CMOS Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage
110 0.8VDDP -0.3 VDDP + 0.2 0.4
A V V V
IOH = -0.5mA IOL = 0.1mA
VDDP - 0.2 0.2
V
Note: 1. The maximum DC voltage on input and I/O pins is VDDP+0.2V. During voltage transitions, inputs may overshoot VDDP by 1.0V for periods of up to 5ns. 2. The minimum DC voltage on input or I/O pins is -0.3V. During voltage transitions, inputs may undershoot VSS by 1.0V for periods of up to 5ns.
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PACKAGE MECHANICAL
Figure 7. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Outline
D D1
e SE E E2 E1 b BALL "A1"
ddd FE FE1 A A1 FD SD A2
BGA-Z42
Note: Drawing is not to scale.
Table 9. Stacked TFBGA88 8x10mm - 8x10 ball array, 0.8mm pitch, Package Mechanical Data
millimeters Symbol Typ A A1 A2 b D D1 ddd E E1 E2 e FD FE FE1 SD SE 10.000 7.200 8.800 0.800 1.200 1.400 0.600 0.400 0.400 - - 9.900 0.850 0.350 8.000 5.600 0.100 10.100 0.3937 0.2835 0.3465 0.0315 0.0472 0.0551 0.0236 0.0157 0.0157 - - 0.3898 0.300 7.900 0.400 8.100 0.200 0.0335 0.0138 0.3150 0.2205 0.0039 0.3976 0.0118 0.3110 0.0157 0.3189 Min Max 1.200 0.0079 Typ Min Max 0.0472 inches
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PART NUMBERING
Table 10. Ordering Information Scheme
Example: Device Type M36 = Multiple Memory Product (Multiple Flash + RAM) Flash 1 Architecture W = Multiple Bank, Burst mode Flash 2 Architecture 0 = none present Operating Voltage R = VDDF = VDDQ =VDDP = 1.7V to 1.95V Flash 1 Density 6 = 64 Mbit Flash 2 Density 0 = none present RAM 1 Density 4 = 16 Mbit RAM 0 Density 0 = none present Parameter Blocks Location T = Top Boot Block Flash B = Bottom Boot Block Flash Product Version 0 = 0.13m Flash technology, 70ns; 0.18m RAM, 70ns speed Package ZAQ = Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch Option Blank = Standard Packing T = Tape & Reel Packing E = Lead-Free and RoHS Package, Standard Packing F = Lead-Free and RoHS Package, Tape & Reel Packing M36 W0 R 6 0 4 0 T 0 ZAQ T
Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
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REVISION HISTORY
Table 11. Document Revision History
Date 07-Nov-2003 Version 1.0 First Issue Document status promoted from Target Specification to full Datasheet. Package specification updated. The TFBGA88 package is fully compliant with the ST ECOPACK specification. Flash memory and PSRAM data updated to the M58WR064FT/B datasheet version 5.0 of 08-Oct-2004 and to the M69AR024B datasheet version 6.0 of 29-Sep-2004, respectively. Revision Details
02-Dec-2004
2.0
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. ECOPACK is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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